Temporal and spatial atomic layer deposition of al-doped zinc oxide as a passivating conductive contact for silicon solar cells

HIGHLIGHTS

• who: Bart Macco from the Department of Applied Physics, Eindhoven University of Technology, POBox, MB, Eindhoven, the Netherlands have published the research work: Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells, in the Journal: (JOURNAL)
• what: The authors demonstrate that both the ZnO and Al2O3 layers can be made significantly thinner than in previous studies without sigu00ad nificant loss of passivation. The authors provide details on a pH-controlled wet-etch that was developed to remove the Al2O3 selectively from the ZnO:Al . . .
  

   

  

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