3c-sic heteroepitaxial layers grown on silicon substrates with various orientations

HIGHLIGHTS

• who: Gabriel Ferro and colleagues from the Laboratoire des Multimatu00e9riaux et Interfaces, UMR CNRS, Victor Grignard, Lyon, (France) have published the research work: 3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations, in the Journal: (JOURNAL)
• what: This work investigates the 3C-SiC heteroepitaxial growth on silicon substrates having a wide variety of i.e. on axis and 2u00b0off and_(995).
• future: More experimental and theoretical work is required for correlating these orientations with the bow.

SUMMARY

Silicon Carbide and Related Materials 2021 Si(100) substrate at . . .

 



If you want to have access to all the content you need to log in!

Thanks :)

Username or Email

Password

Remember me

Lost your password?

If you don't have an account, you can create one here.