HIGHLIGHTS
- who: Tao Yang and collaborators from the Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China University of Chinese Academy of Sciences, Beijing, China have published the research: Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash, in the Journal: Micromachines 2023, x of /2023/
- what: The authors demonstrated the dopant activation and the engineering of Poly-Si channel grains in vertical channel transistor devices by laser thermal annealing in 3D NAND Flash.
SUMMARY
While in 3D NAND . . .
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