HIGHLIGHTS
- who: Shujuan Mao and collaborators from the Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaSchool of Microelectronics, University of Chinese Academy of Sciences, Beijing, China have published the article: Low-Temperature (500 C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration, in the Journal: Nanomaterials 2022, 12, 1218. of 16/02/2022
- what: In this work low-temperature source/drain (S/D) MOSFETs are investigated as the top-tier devices for 3D are successfully fabricated with a maximum processing temperature of 500 u25e6 C. Through source/drain extension (SDE) engineering competitive driving capability . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.