Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

HIGHLIGHTS

• who: Seunguk Song from the (UNIVERSITY) have published the research work: Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length, in the Journal: (JOURNAL) of 22/05/2022
• what: The authors report here a spatially-controlled, reproducible preparation of metallic vdW PtTe2 crystals as a lateral edge contact with semiconducting monolayer MoS2.
• how: As an efficient edge contact metal for MoS2 the authors selected one of 2D metallic TMDs PtTe2 because it exhibits many attractive features as potential n-type metal contacts for 2D semiconductors. Given . . .
  

   

  

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