HIGHLIGHTS
- who: GeTe ultrathin film based and collaborators from the Laboratory of Infrared Material and Devices and Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Advanced Technology Research Institute, Ningbo University, Ningbo, China have published the Article: GeTe ultrathin film based phase-change memory with extreme thermal stability, fast SET speed, and low RESET power energy, in the Journal: (JOURNAL)
- what: By measuring the RESET process of numbers of PCM cells, the authors show the comparison results of consumption energy between GST based PCM and GeTe based PCM in Fig 5(b). The authors . . .
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