Interlayer investigations of gan heterostructures integrated into silicon substrates by surface activated bonding

HIGHLIGHTS

• who: Shi Zhou and collaborators from the State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Nano Science and Technology Institute, University of Science and Technology of China, Hefei, China have published the Article: Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding, in the Journal: Crystals 2023, 217 of /2023/
• what: In this work the GaN-on-Si heterostructures were directly bonded at room temperature by surface bonding (SAB) and the therein residual stress states were investigated by confocal micro-Raman. The main . . .
  

   

  

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