Spin qubits in silicon finfet devices

HIGHLIGHTS

• who: A. Fuhrer and collaborators from the DepartmentUniversity of Basel, Klingelbergstrasse, Basel, Switzerland have published the article: Spin Qubits in Silicon FinFET Devices, in the Journal: (JOURNAL)
• what: In an outlook the authors discuss how to further scale this technology towards 2D arrays. In the following the authors focus on a double quantum dot as shown in Fig 5 a), defined by accumulating a hole spin below each of the second gate layer gates (P1, P2) and using the first gate layer plunger gate (B) to tune the potential barrier between the qubits. The authors . . .
  

   

  

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