HIGHLIGHTS
- who: Alexander A. Lebedev and colleagues from the Ioffe Institute, Politekhnicheskaya Street, StPetersburg, Russia Department of Experimental Physics, StPetersburg State Polytechnic University, Polytekhnicheskaya , have published the research: Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide, in the Journal: Materials 2022, 8637 of /2022/
- what: In calculations, the rate of the center Z1/2 generation, determined from the analysis of DLTS spectra, was used.
- how: As the dose (fluence) u03a6Inincreases the dispersion increases greatly reflecting the appearance relatively shallow this study the features of . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.