Optical investigation of p-gaas/i-gan as sb /n-gaas quantum wells emitters

HIGHLIGHTS

• who: Quantum Wells Emitters et al. from the Physics Department, Faculty of Sciences and Arts in Qurayyat, Jouf University, Sakaka, Jouf, Saudi Arabia have published the article: Optical Investigation of p-GaAs/i-GaN As Sb /n-GaAs Quantum Wells Emitters, in the Journal: Journal of Nanotechnology of 13/04/2022
• what: The aim of this work is to investigate the optical gain and radiative current density of 1.55 u00b5m p-GaAs/iGaN0.38yAs1-1.38ySby/n-GaAs quantum wells emitters.

SUMMARY

Antimony-based III-V semiconductors have a great . . .

 



If you want to have access to all the content you need to log in!

Thanks :)

Username or Email

Password

Remember me

Lost your password?

If you don't have an account, you can create one here.