Nitrogen investigation by sims in two wide band-gap semiconductors: diamond and silicon carbide

HIGHLIGHTS

• who: Marie Amandine Pinault-Thaury and Franu00e7ois Jomard from the Universitu00e9 Paris-Saclay, UVSQ, CNRS, GEMaC, Versailles, FRANCE have published the article: Nitrogen Investigation by SIMS in Two Wide Band-Gap Semiconductors: Diamond and Silicon Carbide, in the Journal: (JOURNAL)
• what: With the standard SIMS conditions the authors investigate 12C14N- secondary ions under cesium primary ions by applying high mass resolution settings. The authors propose to apply and adjust the method of analyzing nitrogen in diamond to silicon carbide. The authors have investigated nitrogen detection by SIMS.
• how: The authors have applied the . . .
  

   

  

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