HIGHLIGHTS
- who: Ye-Nan Bie and collaborators from the State Key Laboratory of Mobile Network and Mobile Multimedia Technology, Shenzhen, China School of Microelectronics, Xidian University, Xi`an, China have published the research work: Effect of Source Field Plate Cracks on the Electrical Performance of AlGaN/GaN HEMT Devices, in the Journal: Crystals 2022, 1195 of /2022/
- what: In this study the effects of cracks in source field plates (SFPs) on the electrical performance of AlGaN/GaN high electron mobility transistors (HEMTs) are investigated systematically using numerical simulation. This work provides potential support for SFP structural . . .
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