Study on tungsten metallization and interfacial bonding of silicon nitride high-temperature co-fired ceramic substrates

HIGHLIGHTS

• who: Ling-Feng Wang and collaborators from the Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, China have published the article: Study on Tungsten Metallization and Interfacial Bonding of Silicon Nitride High-Temperature Co-Fired Ceramic Substrates, in the Journal: Materials 2023, 16, x FOR PEER REVIEW of /2023/
• what: Suitable amounts of N4 powder and great interfacial bonding were the main reasons for the tough interfacial matching between the N4 ceramic and the conduction layer. In this study, the Si green tape was obtained by tape casting with . . .
  

   

  

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