HIGHLIGHTS
- who: Felix Junge et al. from the IIInstitute of Physics, Georg-August-Universitu00e4t Gu00f6ttingen, Gu00f6ttingen, Germany have published the article: Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation, in the Journal: Nanomaterials 2023, 13, 658. of /2023/
- what: In this paper the effectiveness of ultra-low-energy ion implantation as a means of defect engineering in graphene was explored through the measurement of Scanning Kelvin Probe Microscopy (SKPM) and Raman spectroscopy with boron (B) and helium (He) ions being implanted into monolayer graphene samples. To further expand the capabilities . . .
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