HIGHLIGHTS
- who: Short-circuit current density and collaborators from the LATSI Laboratory, Department of electronics, Faculty of Technology, University, Villeneuve of Ascq, France have published the Article: Improving the efficiency of a GaInP solar cell using an AlGaAs buffer layer by optimizing the thicknesses of the PN junction, in the Journal: (JOURNAL)
- what: In the paper presented by Ahmed Benlekhdim 2018, an efficiency of 18.55% was reported by optimizing the AlGaAs of both the layers of the window and the buffer; and the GaInP BSF layer with a solar cell thickness of 0.86 u00b5m . . .
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