HIGHLIGHTS
- who: Guojie Chen and collaborators from the Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Optoelectronic Engineering, Shenzhen University, Shenzhen, China have published the paper: Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell, in the Journal: Nanomaterials 2023, 13, 1240. of /2023/
- what: The work has investigated the impact of Te doping on the functionality of the device. This study demonstrated an effective doping strategy, which can significantly enhance the Sb2 Se3 physical properties, providing a helpful direction for the creation of Sb2 Se3 . . .
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