Evaluation of gan hemts in h3trb reliability testing

HIGHLIGHTS

• who: Jose A. Rodriguez and colleagues from the Center for Pulsed Power and Power Electronics, Department of Electrical and Computer Engineering have published the research: Evaluation of GaN HEMTs in H3TRB Reliability Testing, in the Journal: Electronics 2022, 11, x FOR PEER REVIEW Electronics 2022, 11, x FOR PEER REVIEW of /2022/
• what: This paper evaluates commercial GaN devices under high humidity, high temperature, and high voltage accelerated tests.
• how: This paper presents a comparative study of GaN HEMTs evaluated under the H3 TRB test following the JEDEC standard JESD22-A101. The average . . .
  

   

  

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