A novel concept of electron-hole enhancement for superjunction reverse-conducting insulated gate bipolar transistor with electron-blocking layer

HIGHLIGHTS

• who: Zhigang Wang et al. from the School of Information Science and Technology, Southwest Jiao Tong University, Chengdu, China have published the paper: A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer, in the Journal: Micromachines 2023, 646 of /2023/
• what: In this paper, the state-of-the-art superjunction reverse-conducting IGBT (SJ-RC-IGBT) for superior Von -Eoff trade-off is proposed and verified by simulation.

SUMMARY

The reverse-conducting insulated gate bipolar transistor (RC-IGBT) is a crucial . . .

 



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