Structural defects improve the memristive characteristics of epitaxial la_0.8sr_0.2mno_ 3-based devices

HIGHLIGHTS

• who: Carlos Moncasi and colleagues from the UnivGrenoble Alpes, CNRS, Grenoble INP, LMGP, Grenoble, France have published the research: Structural defects improve the memristive characteristics of epitaxial La_0.8Sr_0.2MnO_ 3-based devices, in the Journal: (JOURNAL)
• what: The authors focus on devices with the same length between electrodes. As a first approximation the authors compare the high-temperature oxygen diffusion coefficients reported in the literature for LSM, although for the devices the voltage (field) would be the driving force, resulting in an oxygen drift instead of thermal diffusion. Based on these results, the authors . . .
  

   

  

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