HIGHLIGHTS
- who: Junxue Li from the experiments are purchased from D Semiconductor and the CGT crystals are provided by ProfS. Jia`s group at Peking University5. For device , with the edge insulated from the ML-WTe, interior (bulk) channel, a thin BN layer is transferred to cover the Pt electrodes except the far ends (Supplementary Fig., e) prior to the transfer of ML-WTe2/ CGT composite layer on to the pre-patterned Pt electrodes6. The MLWTe2/CGT heterostructure device including Pt electrodes is encapsulated by a top BN layer to prevent degradation and maintain device stability. The above . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.