HIGHLIGHTS
- who: Takaaki Noguchi from the to a thickness of , to , nm on the , or , kV Ga+ ion beamsThe damaged layers were removed using a , kV Ga+ ion beam. About , FIB sections were prepared and investigated by the team. In parallel with the above work, we also performed FIB and (scanning) transmission electron microscopy under air-free conditions using an air-tight FIB-SEM sample transfer holder and a double tilt , Atmos Defend Holder (Mel-Build Corporation) at Kyushu University. Another air-tight sample holder was used to transfer the samples. An Ar-filled glove box was used . . .
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