Radiation-induced degradation mechanism of x-ray soi pixel sensors with pinned depleted diode structure

HIGHLIGHTS

  • who: Kouichi Hagino and collaborators from the (UNIVERSITY) have published the Article: Radiation-Induced Degradation Mechanism of X-ray SOI Pixel Sensors with Pinned Depleted Diode Structure, in the Journal: (JOURNAL)
  • what: The authors investigate the radiation-induced degradation mechanism of XRPIX utilizing 3-dimensional device simulations.

SUMMARY

    It has been developed for a future wide-band Xray astronomical satellite FORCE aiming for a launch in the early 2030s -[4]. Such a low-noise performance enabled the detection of low-energy X-rays below 1 keV. Ionizing_radiations increase the interface state . . .

     

    Logo ScioWire Beta black

    If you want to have access to all the content you need to log in!

    Thanks :)

    If you don't have an account, you can create one here.

     

Scroll to Top

Add A Knowledge Base Question !

+ = Verify Human or Spambot ?