Dry etching of ternary metal carbide tialc via surface modification using floating wire-assisted vapor plasma

HIGHLIGHTS

• who: Thi-Thuy-Nga Nguyen from the Nagoya University have published the article: Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma, in the Journal: Scientific Reports Scientific Reports
• what: A dry etching method for a ternary metal carbide TiAlC at atomic level has been developed here by transferring from wet etching to dry plasma etching using FW-assisted non-halogen vapor plasma of ammonium hydroxide.
• how: In this study vapors were prepared based on the liquid mixtures that were used in wet etching.

 

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