Band alignments at ga2o3 heterojunction interfaces with si and ge

HIGHLIGHTS

• who: Submitted et al. from the Institute for Renewable Energy, University of Liverpool, Chadwick Building, Peach Street, Liverpool , ZF, United Kingdom , Department of Physics, University of Liverpool, Oliver Lodge Building, Oxford Street, Liverpool , ZE, United Kingdom , Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool , GJ, United Kingdom , School of Engineering, University of Liverpool, Brownlow Hill, Liverpool , GH, United Kingdom , Department of Physics, Faculty of Science, Taif University, Taif, Saudi Arabia ( Received have published the article: Band alignments at Ga2O3 heterojunction interfaces with Si and Ge, in the Journal: (JOURNAL) of 12/06/2018 . . .
  

   

  

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