HIGHLIGHTS
- who: UNIVERSITY THOUGHT et al. from the Priština, Kosovska Mitrovica, Serbia have published the paper: Original Scientific Paper MODIFICATION TRANSITION'S FACTOR IN THE COMPACT SURFACEPOTENTIAL- BASED MOSFET MODEL Kevkić1, in the Journal: (JOURNAL)
- what: The aim of this work is to replace empirical transition's factor with a function that can be precisely determined for given technological characteristics of the MOSFET devices.
SUMMARY
The first two proposed functions incorporated in the original SPB model (van Langevelde and amp; Klaassen, 2000) have given excellent results for the surface potential . . .
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