SUMMARY
When the GaAs(001)-(2 × 4) surface was exposed to the Se molecular beam at 300◦ C, a diffuse (2 × 1) RHEED patterns were observed. In the present experiments, the authors prepared the Se-treated surfaces also on the more Ga-rich ( 4 × 6)20 and As-rich phases of c(4 × 4)α and c(4 × 4)β surfaces21 and confirmed that the initial surface reconstruction hardly affect the structure of the Se-treated (2 × 1) surface. Such a discrepancy could be ascribed to the quality of the Se-treated surface: the samples in ref33 were prepared by . . .
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