HIGHLIGHTS
- who: (C) and collaborators from the Printed in India have published the Article: (C) (Overseas Association), in the Journal: (JOURNAL)
- what: The experiments show that the dependence of the electron mobility on temperature in intrinsic silicon differs from that of holes. A number of runs have been carried out to test the model described above in a typical range of temperatures as a function of impurity concentration.
SUMMARY
Acoustical- and optical-phonon scattering, ionized-impurity scattering, and impact ionization. The effect of incomplete ionization of dopant has been introduced as well . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.