Optimization of transistor characteristics and charge transport in solution processed zno thin films grown from zinc neodecanoate

HIGHLIGHTS

  • who: Nikhil Tiwale from the Optoelectronics Group, Cavendish Laboratory, University of Cambridge, Cambridge CB HE, UK have published the article: Optimization of Transistor Characteristics and Charge Transport in Solution Processed ZnO Thin Films Grown from Zinc Neodecanoate, in the Journal: (JOURNAL)
  • what: Towards this end, the authors explore the usability of non-aqueous precursor zinc neodecanoate, referred henceforth as Zn(NDN), as a novel precursor material for ZnO based electronics with further prospects of fabrication steps being compatible with nanoscale directwriting through electron-beam exposure . In this work, due to the simplicity of fabrication as . . .

     

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