Improving output efficiency of ingan-based mqw green laser diodes by modulating indium content of quantum barriers and using composite lower waveguide layers

HIGHLIGHTS

  • who: Zhenyu Chen et al. from the State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China have published the paper: Improving Output Efficiency of InGaN-Based MQW Green Laser Diodes by Modulating Indium Content of Quantum Barriers and Using Composite Lower Waveguide Layers, in the Journal: Nanomaterials 2022, 2581 of 27/07/2022
  • what: In this study potential barriers and injection efficiency of LDs are investigated by simulation methods. In this article, carrier blocking effects, carrier . . .

     

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