Atomic layer deposition of \(sc_2o_3\) for passivating algan/gan high electron mobility transistor devices

HIGHLIGHTS

• who: Wang and collaborators from the Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, USA Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA , School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, USA , Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, Massachusetts, USA , have published the paper: Atomic Layer Deposition of (Sc_2O_3) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices, in the Journal: (JOURNAL) of 07/Dec/2012
• what: In this letter, the authors report promising electrical performance of ALD Sc2O3 thin films on AlGaN/GaN . . .
  

   

  

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