Design of ldmos device modeling method based on neural network

HIGHLIGHTS

  • who: Teng Liu and collaborators from the Technology Development Department, CSMC Technologies Corporation, Wuxi, China State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China have published the Article: Design of LDMOS Device Modeling Method Based on Neural Network, in the Journal: Computational Intelligence and Neuroscience of 10/08/2022
  • what: Using a voltage-controlled resistor to model the LDMOS drift region, the model is relatively simple, which can not only ensure high accuracy, but also make the calculation converge quickly; by considering the depletion of the . . .

     

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