Zno nanowire field effect transistor for biosensing: a review

HIGHLIGHTS

  • who: Nonofo M.J. Ditshego from the International University of Science and Technology (BIUST), Private bag, Palapye, Botswana have published the research: ZnO Nanowire Field Effect Transistor for Biosensing: A Review, in the Journal: (JOURNAL)
  • what: The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor.

SUMMARY

    The lattice parameters of the wurtzite crystal_structure are a=3.24 Å and c=5.21 Å. Related to similar IIb -VI (e.g CbS, CbSe, ZnSe, ZnS) or III - V (e . . .

     

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