Structural properties of relaxed thin film germanium layers grown by low temperature rf-pecvd epitaxy on si and ge (100) substrates

HIGHLIGHTS

  • who: substrates and collaborators from the Polytechnique, Palaiseau, France have published the research work: Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates, in the Journal: (JOURNAL) of 22/06/2014
  • what: The authors report on unusual low temperature (175 ◦ C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. The authors demonstrate a striking feature of low temperature plasma epitaxy namely the fact that crystalline quality improves with thickness without epitaxy breakC 2014 Author(s).

SUMMARY . . .

 

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