A 26-30 ghz gan hemt low-noise amplifier employing a series inductor-based stability enhancement technique

HIGHLIGHTS

• who: Hyunbae Ahn and colleagues from the Department of Radio and Information Communication Engineering, Chungnam National University have published the article: A 26-30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique, in the Journal: Electronics 2022, 11, x FOR PEER REVIEW of /2022/
• what: The authors demonstrate a 26-30 GHz GaN HEMT LNA monolithic microwave inIn this study, the authors demonstrate a 26-30 GHz GaN HEMT LNA monolithic microwave tegrated circuit (MMIC) using a 0.15-µm GaN-on-silicon carbide (SiC) process.
• how . . .
  

   

  

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