HIGHLIGHTS
- What: In this paper, an E-band three-stage LNA with high gain flatness and low NF fabricated in 28-nm CMOS HPC-plus process is presented.
- Who: CMOS and colleagues from the Graduate Institute of Communication Engineering, University, Taipei, and Department have published the Article: International Journal of Microwave and Wireless Research Paper, in the Journal: (JOURNAL)
- How: This paper presents three-stage low-noise amplifier (LNA) fabricated in 28-nm Complementary Metal Oxide Semiconductor High-Performance Compact Plus process.
SUMMARY
The 71-76 and 81-86 GHz . . .
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