A modeling methodology for resistive ram based on stanford-pku model with extended multilevel capability

HIGHLIGHTS

• who: T- from the ARRAM models: Classification Based on the modeling philosophy, RRAM models can be broadly classified as either ‘physics-based' models or ‘blackbox' models [4]. In the former modeling philosophy, the physical properties of the device and the switching physics are understood and modeled by appropriate equations. In the ‘black-box' approach (also called ‘measurement' approach), the RRAM is modeled based on how it responds to different stimulus and the approach is agnostic to the device structure. The measured experimental data are formulated as mathematical equations, resulting in a model for RRAM. Physics-based models . . .
  

   

  

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