A physics-based model for mobile-ionic field-effect transistors with steep subthreshold swing

HIGHLIGHTS

• who: Jiajia Chen and collaborators from the (UNIVERSITY) have published the paper: A Physics-Based Model for Mobile-Ionic Field-Effect Transistors with Steep Subthreshold Swing, in the Journal: (JOURNAL)
• what: The authors propose a physics-based model describing mobile ions in the dielectrics of MIFETs based on the self-consistent two-dimensional (2D) Poisson`s, non-equilibrium Green`s function (NEGF), and ion drift-diffusion (IDD) equations. Note that, different from changing the resistance of the dielectric layer through the filament forming, or the increment of electronic traps concentration , the model focuses on the . . .
  

   

  

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