A review on morphotropic phase boundary in fluorite-structure hafnia towards dram technology

HIGHLIGHTS

• who: Minhyun Jung from the (UNIVERSITY) have published the paper: A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology, in the Journal: (JOURNAL)
• what: In this review the authors focus the morphotropic phase boundary (MPB) between ferroelectric orthorhombic and tetragonal phases where the authors can achieve a high dielectric constant and thereby reduce the EOT. The reason of this phenomenon is related with larger lattice parameter of u00adZrO2 rather than u00adHfO2. In general, u00adVo in ZnO semiconductor materials is the main reason for the leakage current path; thus, hydrogen atmosphere high . . .
  

   

  

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