A simulation optimization factor of si(111)-based algan/gan epitaxy for high frequency and low-voltage-control high electron mobility transistor application

HIGHLIGHTS

• who: He Guan and colleagues from the School of Microelectronics, Northwestern Polytechnical University, Xi`an, China have published the research work: A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application, in the Journal: Micromachines 2023, 14, x FOR PEER REVIEW epitaxy of /2023/
• what: __SECTION__ 6. Conclusions.
• how: When the onbarrier layer Al components are simulated and the simulation results are shown in Figure layer Al components are simulated and the simulationcurrent results density are shown in Figure 6 . . .
  

   

  

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