HIGHLIGHTS
- who: Ivan Ricardo Cisneros-Contreras et al. from the Instituto de Fu00edsica, Universidad Nacional Autu00f3noma de Mu00e9xico, Circuito de la Investigaciu00f3n Cientu00edfica s/n, Ciudad Universitaria, AP20-364, Coyoacu00e1n, Mexico City, Mexico have published the Article: Al-Doped ZnO Thin Films with 80% Average Transmittance and 32 Ohms per Square Sheet Resistance: A Genuine Alternative to Commercial High-Performance Indium Tin Oxide, in the Journal: Physics 2023, 4, FOR PEER REVIEW of /2023/
- what: In the current study, the values of u03a6H-HR are evaluated with n=10, 12, and 20 to assess the films . . .
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