Algan/gan high electron mobility transistors grown by movpe on 3c-sic/si(111) for rf applications

HIGHLIGHTS

• who: Marie Lesecq et al. from the UnivLille, CNRS, Centrale Lille, UnivPolytechnique Hauts-de-France have published the research work: AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications, in the Journal: (JOURNAL)

SUMMARY

Fmax of 110 GHz were obtained on 100 nm tri-gate devices associated with an ION/IOFF ratio of 108. Beyond these achievements, the thickening of the 3C-SiC intermediate layer seems to be promising to improve the thermal dissipation, to reduce the propagation losses and to increase the RF performance . . .

 



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