HIGHLIGHTS
- who: Zenghui Fan and collaborators from the Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China have published the Article: Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection, in the Journal: Micromachines
- what: In this study, Idark was fixed as 10-10 A for all the measurements and Iilluminated was obtained under the same gate voltage corresponding to Idark.
- how: The authors investigated the influences of oxygen partial pressure (PO ) for DSCL-TFTs on their sensing abilities by experiments as well as Technology Computer Aided Design . . .
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