An efficient dopant for introducing magnetism into topological insulator bi2se3

HIGHLIGHTS

• who: Dan Wang and colleagues from the College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, China have published the Article: An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3, in the Journal: Materials 2022, 3864 of /2022/
• what: Structure of C Doping Bi2 Sestructure 3 Next, the authors focus on the electronic of C doping Bi2Se3 because C doping can Next, the authors focus on the electronic structure C doping C doping can introduce magnetism at each doping position.ofThe valenceBiband maximum (VBM) of the 2 Se3 because introduce at eachby doping . . .
  

   

  

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