HIGHLIGHTS
- who: Dong Xiang and collaborators from the School of Technology, Harbin, China Hubei University have published the article: An improved analytical model for the statistics of SET emergence point in HfO2 memristive device, in the Journal: (JOURNAL)
- what: Different from the usually reported abrupt SET switching, some RRAM devices, for example, the Cu/HfO2 /Pt device studied in this work, show complicated SET process with multiple steps. To explore the influence factor of the distribution parameters (Weibull slope, scale factor, clustering factor), the authors develop a deterministic model to relate the SET parameters` statistics with . . .
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