HIGHLIGHTS
- who: Pankaj Kumar from the Department have published the research: Analog and RF performance optimization for gate all around tunnel FET using broken-gap material, in the Journal: Scientific Reports Scientific Reports
- what: The aim of this paper is to design and optimize III-V elliptical gate-all-around TFET (III-V eGAA TFET) by varying the minor diameter (MD) and gate dielectric thickness (u00ad TOX) of the channel region to get the optimized MD and u00adTOX of the elliptical structure.
SUMMARY
The aim of this paper is to design and . . .
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