HIGHLIGHTS
- who: Influence on Dark Current and collaborators from the School of Microelectronics, Tianjin University, Tianjin, China have published the Article: Analysis of Transfer Gate Doping Profile Influence on Dark Current and FWC in CMOS Image Sensors, in the Journal: (JOURNAL)
- what: The aim of this article is to analyze the effect of the TG doping profile on dark current and FWC.
- how: The calculation results are shown in Fig 11. This article shows that a precisely designed TG doping profile and its length will results in a balanced dark current and FWC.
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.