HIGHLIGHTS
- who: Wenlong Li et al. from the Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences have published the article: Anisotropic Strain Relaxation in Semipolar (1122) InGaN/GaN Superlattice Relaxed Templates, in the Journal: Nanomaterials 2022, 12, 3007. of /2022/
- what: We prepared semipolar (1122) InGaN/GaN superlattice templates with different periodical InGaN layer thicknesses on m-sapphire substrates.
- how: Previous results showed that the growth of the multiple quantum wells (MQWs) on the relaxed thick InGaN layers could effectively improve electroluminescence (EL) intensity decrease the . . .
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