Anomalous magnetoresistance due to longitudinal spin fluctuations in a jeff⠋=⠋1/2 mott semiconductor

HIGHLIGHTS

• who: Lin Hao from the University of, Argonne, IL, USA have published the Article: Anomalous magnetoresistance due to longitudinal spin fluctuations in a Jeff⠋=⠋1/2 Mott semiconductor, in the Journal: NATURE COMMUNICATIONS NATURE COMMUNICATIONS
• what: The authors report an experiment-theory-combined investigation on the spin and charge interlay in a square-lattice iridate built as an artificial superlattice (SL) of SrIrO3 and SrTiO3, which is well described by a two-dimensional (2D) single-band Hubbard model in the crossover regime between the Mott3 and the Slater21 limits.
• how: The X-ray . . .
  

   

  

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