Antisymmetric linear magnetoresistance and the planar hall effect

HIGHLIGHTS

• who: Yishu Wang from the California Institute of Technology, Pasadena, CA, USAHopkins University have published the Article: Antisymmetric linear magnetoresistance and the planar Hall effect, in the Journal: NATURE COMMUNICATIONS NATURE COMMUNICATIONS
• what: As the authors demonstrate below, removing the requirement that M is parallel to H opens the door for a wide range of antisymmetric galvanomagnetic behavior, encompassing both transverse and longitudinal MR14 and the magnetic planar Hall effect13. The authors focus here on two such classes of materials to investigate experimentally the two antisymmetric linear forms, (M × E) × H and_(M · H)E . . .
  

   

  

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