Aqueous electrolyte-gated solution-processed metal oxide transistors for direct cellular interfaces

HIGHLIGHTS

  • who: Dong-Hee Kang and colleagues from the School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Republic of Korea Electrical and Computer Engineering, Ajou University, Suwon, Republic of Korea have published the research: Aqueous electrolyte-gated solution-processed metal oxide transistors for direct cellular interfaces, in the Journal: (JOURNAL)
  • what: The authors propose an electrolyte-gated thin-film transistor made of large-area solution-processed indium-gallium-zinc oxide (IGZO) semiconductors capable of directly interacting with live cells at physiological conditions.
  • how: This result can be attributed to . . .

     

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